Paper
21 December 2023 High-power traveling wave photodetector with monolithically integrated bias circuitry network on a silicon photonics platform
Author Affiliations +
Proceedings Volume 12966, AOPC 2023: AI in Optics and Photonics ; 129660K (2023) https://doi.org/10.1117/12.3005638
Event: Applied Optics and Photonics China 2023 (AOPC2023), 2023, Beijing, China
Abstract
We demonstrate the 4-stage traveling wave photodetector (TWPD) with monolithically integrated bias circuitry network based on a silicon photonics process. A bias circuitry network comprised of inductors is integrated at the input terminal to provide the bias voltage for device while prevent the leak of the RF signal into the voltage circuitry. Experimentally, the maximum RF powers of load terminal are 8 dB higher than input end at high frequencies, validated the effectiveness of RF-choke.
(2023) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Zhujun Wei, Zhilei Fu, Qiang Zhang, Nannan Ning, Qikai Huang, Yuehai Wang, Jianyi Yang, and Hui Yu "High-power traveling wave photodetector with monolithically integrated bias circuitry network on a silicon photonics platform", Proc. SPIE 12966, AOPC 2023: AI in Optics and Photonics , 129660K (21 December 2023); https://doi.org/10.1117/12.3005638
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KEYWORDS
Integrated circuits

Photodetectors

Silicon photonics

Optical amplifiers

Photocurrent

Phased array optics

Phased arrays

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