Presentation
10 June 2024 Compositional analysis of MBE-grown InAs/InAsSb T2SL for MWIR detector: towards a refined understanding of transport and optical properties
J.P. Perez, M. Tornay, R. Arinero, P. Christol, G. Patrairche, K. Pantzas, N. Péré-Laperne
Author Affiliations +
Abstract
N-type Ga-free InAs / InAs1-xSbx T2SL strain-balanced on GaSb is conventionally considered as an anisotropic quantum structure with heavy holes highly confined in InAsSb and electrons distributed throughout the structure. It is then somewhat puzzling that Ga-free T2SL detectors have demonstrated optical responses together with modulation transfer function (MTF) at Nyquist frequency quite satisfactorily. To explain these non-intuitive trends, cross-sectional transmission electron microscopy (TEM) investigations have been carried out, highlighting antimony (Sb) segregation across InAs/InAsSb interfaces. As a result, these must be considered as graded rather than sharp, disrupting consequently, the schematic representation of abrupt quantum potentials. In this communication, the experimental Sb profiles coming from TEM images are used to reach a better understanding of important figures of merit such as absorption, MTF and QE.
Conference Presentation
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
J.P. Perez, M. Tornay, R. Arinero, P. Christol, G. Patrairche, K. Pantzas, and N. Péré-Laperne "Compositional analysis of MBE-grown InAs/InAsSb T2SL for MWIR detector: towards a refined understanding of transport and optical properties", Proc. SPIE 13046, Infrared Technology and Applications L, 130460H (10 June 2024); https://doi.org/10.1117/12.3015496
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KEYWORDS
Indium arsenide

Optical properties

Infrared detectors

Transmission electron microscopy

Antimony

Mid-IR

Quantum efficiency

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