N-type Ga-free InAs / InAs1-xSbx T2SL strain-balanced on GaSb is conventionally considered as an anisotropic quantum structure with heavy holes highly confined in InAsSb and electrons distributed throughout the structure. It is then somewhat puzzling that Ga-free T2SL detectors have demonstrated optical responses together with modulation transfer function (MTF) at Nyquist frequency quite satisfactorily. To explain these non-intuitive trends, cross-sectional transmission electron microscopy (TEM) investigations have been carried out, highlighting antimony (Sb) segregation across InAs/InAsSb interfaces. As a result, these must be considered as graded rather than sharp, disrupting consequently, the schematic representation of abrupt quantum potentials. In this communication, the experimental Sb profiles coming from TEM images are used to reach a better understanding of important figures of merit such as absorption, MTF and QE.
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