Poster + Paper
7 June 2024 Metalens for 80×60 SOI diode uncooled IRFPA
M. Hanaoka, S. Ogawa, M. Iwakawa, S. Fukushima, M. Shimatani
Author Affiliations +
Conference Poster
Abstract
Lenses for use in the infrared (IR) wavelength region are key elements of IR image sensors, and determine the cost and performance of such sensors. As an alternative to a conventional lens, we designed and fabricated a silicon-based metalens in order to realize a compact, high-performance IR focal plane array (IRFPA) system. The metalens was developed using an automatic inverse design technique based on a rigorous coupled wavelength analysis. It consisted of a periodic array of pillars fabricated by deep reactive-ion etching of a silicon wafer. This metalens was designed for the 80×60 IRFPA used in the Mitsubishi Electric Corporation MIR8060B1, which comprises an array of pn-junction diodes formed on a silicon-on-insulator layer. It is expected that this metalens-based IR sensor will expand the range of applications of such sensors.
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
M. Hanaoka, S. Ogawa, M. Iwakawa, S. Fukushima, and M. Shimatani "Metalens for 80×60 SOI diode uncooled IRFPA", Proc. SPIE 13046, Infrared Technology and Applications L, 130461V (7 June 2024); https://doi.org/10.1117/12.3012746
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KEYWORDS
Infrared sensors

Silicon

Semiconducting wafers

Thermography

Transmittance

Diodes

Image sensors

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