Emissivity modulation of semiconductor infrared source

Ralph M. Mindock

doi:10.1117/12.21690

1 October 1990 Emissivity modulation of semiconductor infrared source

Ralph M. Mindock

Proceedings Volume 1307, Electro-Optical Materials for Switches, Coatings, Sensor Optics, and Detectors; (1990) https://doi.org/10.1117/12.21690
Event: 1990 Technical Symposium on Optics, Electro-Optics, and Sensors, 1990, Orlando, FL, United States

Abstract

Data on advances in the technology of a new patented infrared source are presented. Infrared output from 3 to 12 microns is produced by the modulation of the emissivity of silicon. Information on the long term stability and on various applications for the source is provided.

Citation Download Citation

Ralph M. Mindock "Emissivity modulation of semiconductor infrared source", Proc. SPIE 1307, Electro-Optical Materials for Switches, Coatings, Sensor Optics, and Detectors, (1 October 1990); https://doi.org/10.1117/12.21690

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