Paper
1 November 1990 Photovoltaic effect and optical properties of ferroelectric thin films made by sol-gel processing
Yuhuan Xu, Ching Jih Chen, N. Desimone, John D. Mackenzie
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Abstract
Ferroelectric thin films including undoped and doped PZT (lead zirconate titanate), BaTiO3 (barium titanate), SBN (strontium barium niobate), KNbO3 (potassium niobate), PBN (lead barium niobate), KNSBN (potassium sodium strontium barium niobate), and LiNbO3 (lithium niobate) were made on silicon and fused silica substrates by a sol-gel process. A heterojunction effect was observed in ferroelectric thin films on both n-silicon and p-silicon through measurement of I- V characteristics, and by the demonstration ofa photocurrent effect. Transparent and preferentially orientated SBN thin films on fused silica substrates can be obtained by applying a d.c. electric field during heat treatment. The films have structral and optical anisotropies as well as photorefractive properties. Two-wave mixing experiment was demonstrated by using these films and a maxmum holographic efficiency of near 1% was obtained.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuhuan Xu, Ching Jih Chen, N. Desimone, and John D. Mackenzie "Photovoltaic effect and optical properties of ferroelectric thin films made by sol-gel processing", Proc. SPIE 1328, Sol-Gel Optics, (1 November 1990); https://doi.org/10.1117/12.22579
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Cited by 2 scholarly publications.
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KEYWORDS
Thin films

Ferroelectric materials

Sol-gels

Silicon

Silicon films

Photovoltaics

Silica

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