Paper
1 March 1991 Optical resonances of a semiconductor superlattice in parallel magnetic and electric fields
Monica Pacheco, Zdenka Barticevic, Francisco Claro
Author Affiliations +
Abstract
We report calculations of the optical absorption coefficient for interband transitions in a superlattice subject to electric and magnetic fields parallel to the growth axis. We show that in a two-band model the absorption spectrum is a sequence of resonances with a structure that can be simple or very complex depending in a sensitive way on the ratio between the magnetic and the electric energies. We discuss the case of GaAs/A1GaAs superlattices using a six-band model in the envelope function formalism. For this system we show that the two-band parabolic model may only be used at low magnetic field.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Monica Pacheco, Zdenka Barticevic, and Francisco Claro "Optical resonances of a semiconductor superlattice in parallel magnetic and electric fields", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24297
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Magnetism

Absorption

Quantum wells

Superlattices

Stereolithography

Fluctuations and noise

Optoelectronic devices

Back to Top