A two-dimensional perturbation technique to model ion-implanted GaAs MESFET for millimeter-wave systems

E. Donkor

doi:10.1117/12.2301453

1 December 1990 A two-dimensional perturbation technique to model ion-implanted GaAs MESFET for millimeter-wave systems

E. Donkor

Proceedings Volume 1514, 15th International Conference on Infrared and Millimeter Waves; 151417 (1990) https://doi.org/10.1117/12.2301453
Event: 15th International Conference on Infrared and Millimeter Waves, 1990, Orlando, FL, United States

Abstract

A perturbation technique is presented to analytically model various electrical characteristics of ion-implanted MESFETs. It involves on the determination of the potential distribution in the irregularly—bounded depletion region under the gate by solving the two-dimensional Poisson's equation.

Citation Download Citation

E. Donkor "A two-dimensional perturbation technique to model ion-implanted GaAs MESFET for millimeter-wave systems", Proc. SPIE 1514, 15th International Conference on Infrared and Millimeter Waves, 151417 (1 December 1990); https://doi.org/10.1117/12.2301453

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