Effect of reversal of double-implantation schedule of boron in mercury cadmium telluride

Rakesh Kumar; M. B. Dutt; R. Nath; Vishnu Gopal; Y. P. Khosla; K. K. Sharma

doi:10.1117/12.56993

1 February 1992 Effect of reversal of double-implantation schedule of boron in mercury cadmium telluride

Rakesh Kumar, M. B. Dutt, R. Nath, Vishnu Gopal, Y. P. Khosla, K. K. Sharma

Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.56993
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India

Abstract

Radiation damage due to B⁺ ion implantation in p-type HgCdTe has been found to create Hg interstitials giving rise to n-type conversion. The implantation energies were kept at 50 and 100 keV with a dose of 1 X 10¹³ cm^-2 each. The effect of implantation with ascending and descending orders of energies were found to be quite different from each other. Radiation enhanced diffusion is thought to be responsible for this anomaly.

Citation Download Citation

Rakesh Kumar, M. B. Dutt, R. Nath, Vishnu Gopal, Y. P. Khosla, and K. K. Sharma "Effect of reversal of double-implantation schedule of boron in mercury cadmium telluride", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); https://doi.org/10.1117/12.56993

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