XPS depth profile of ion-beam-synthesized A12O3SiO2 composite oxide layers on silicon

S. K. Dubey; A. D. Yadav; P. M. Raole; P. D. Prabhawalkar

doi:10.1117/12.56979

1 February 1992 XPS depth profile of ion-beam-synthesized A1₂O₃SiO₂ composite oxide layers on silicon

S. K. Dubey, A. D. Yadav, P. M. Raole, P. D. Prabhawalkar

Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.56979
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India

Abstract

Aluminum films (99.999%) were deposited onto p-type <100< silicon wafers. The samples were implanted at room temperature with 1 X 10¹⁷, 3 X 10¹⁷ and 5 X 10¹⁷ O₂^PLU - cm^-2 at 30 keV. XPS spectra was recorded for Al_2p3/2 and Si_2p lines at various depths. XPS studies confirmed the formation of Al₂O₃ at all doses and SiO₂ at 5 X 10¹⁷ O₂⁺ - cm^-2.

Citation Download Citation

S. K. Dubey, A. D. Yadav, P. M. Raole, and P. D. Prabhawalkar "XPS depth profile of ion-beam-synthesized A1₂O₃SiO₂ composite oxide layers on silicon", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); https://doi.org/10.1117/12.56979

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