Influence of far infrared radiation on the current of double barrier resonant tunneling devices

C. Kutter

doi:10.1117/12.2297834

1 October 1991 Influence of far infrared radiation on the current of double barrier resonant tunneling devices

C. Kutter

Proceedings Volume 1576, 16th International Conference on Infrared and Millimeter Waves; 15763D (1991) https://doi.org/10.1117/12.2297834
Event: 16th International Conference on Infrared and Millimeter Waves, 1991, Lausanne, Switzerland

Abstract

We have studied the influence of Far Infra-Red (FIR) radiation on the current of Double Barrier Resonant Tunneling Devices (DBRTD), consisting of consecutive layers of GaAs/AlGaAs. The current-voltage- (I(V)-) characteristic of these devices is strongly nonlinear and shows for device 1 (5nm well) two regions of negative differential resistance (NDR) and more than twenty for device 2 and 3 (60nm, 120nm well), since for these latter devices the energy levels are closer spaced due to the wider quantum wells [1].

Citation Download Citation

C. Kutter "Influence of far infrared radiation on the current of double barrier resonant tunneling devices", Proc. SPIE 1576, 16th International Conference on Infrared and Millimeter Waves, 15763D (1 October 1991); https://doi.org/10.1117/12.2297834

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