Interface structure of CoSi<sub>2</sub> and HoSi<sub>2</sub> epitaxies on silicon

Sharath Dakshinamurthy; Krishna Rajan

doi:10.1117/12.636955

16 December 1992 Interface structure of CoSi₂ and HoSi₂ epitaxies on silicon

Sharath Dakshinamurthy, Krishna Rajan

Proceedings Volume 1622, Emerging Optoelectronic Technologies; (1992) https://doi.org/10.1117/12.636955
Event: Emerging OE Technologies, Bangalore, India, 1991, Bangalore, India

Abstract

The occurrence of the defect structures in heteroepita. xies can be attributed to some low energy configuration of atoms at the interface which also result in specific orientation relationships between the epilayer and the substrate. Here we apply a generalized model to characterize the interfaces of CoSi2 and MoSi2 with silicon and compare the predictions of the models with TEM observations of the defect structure.

Citation Download Citation

Sharath Dakshinamurthy and Krishna Rajan "Interface structure of CoSi₂ and HoSi₂ epitaxies on silicon", Proc. SPIE 1622, Emerging Optoelectronic Technologies, (16 December 1992); https://doi.org/10.1117/12.636955

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