Lock-on effect in GaAs photoconductive switches

Hanmin Zhao; Jung H. Hur; Peyman Hadizad; Martin A. Gundersen

doi:10.1117/12.59079

12 May 1992 Lock-on effect in GaAs photoconductive switches

Hanmin Zhao, Jung H. Hur, Peyman Hadizad, Martin A. Gundersen

Proceedings Volume 1632, Optically Activated Switching II; (1992) https://doi.org/10.1117/12.59079
Event: OE/LASE '92, 1992, Los Angeles, CA, United States

Abstract

The lock-on effect observed in high power, light-activated GaAs bulk switches is very important in determining the GaAs power device performance. An analytical model to explain the physical origin of this effect is presented. In this model, negative resistance associated with transferred-electron effect creates high-field-induced avalanche injection at the anode contact. A regional approximation is used to calculate the field distribution in the device and to derive the device f-V characteristics. Reported experimental results are in good agreement with the model over a wide range of device parameters.

Citation Download Citation

Hanmin Zhao, Jung H. Hur, Peyman Hadizad, and Martin A. Gundersen "Lock-on effect in GaAs photoconductive switches", Proc. SPIE 1632, Optically Activated Switching II, (12 May 1992); https://doi.org/10.1117/12.59079

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