Paper
26 June 1992 Effects of design and processing on the reliability of high-power AlGaAs diode lasers
Allen D. Danner, Susan W. Gersten, David K. Wagner, Rushikesh M. Patel, Kambiz Fallahpour, Margaret H. Abraham, Andre Khachatourians, Darren Perrachione
Author Affiliations +
Abstract
The use of high power laser diodes in applications such as pumping of solid state lasers requires devices which are highly reliable. We report the results of a series of experiments in which the effects on device reliability of several key processing steps are investigated. Electron Beam Induced Current (EBIC) is used to nondestructively characterize the Dark Line Defects (DLD5) throughout the lifetest and provides information regarding the source and propagation of the DLDs.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Allen D. Danner, Susan W. Gersten, David K. Wagner, Rushikesh M. Patel, Kambiz Fallahpour, Margaret H. Abraham, Andre Khachatourians, and Darren Perrachione "Effects of design and processing on the reliability of high-power AlGaAs diode lasers", Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); https://doi.org/10.1117/12.59139
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Semiconducting wafers

Semiconductor lasers

Reliability

Quantum wells

High power lasers

Diodes

Electron beams

Back to Top