Electromodulation of semiconductors and semiconductor microstructures utilizing a new contactless technique

X. Yin; Xinxin Guo; Fred H. Pollak; G. D. Pettit; Jerry M. Woodall; Eun-He Cirlin

doi:10.1117/12.60452

1 July 1992 Electromodulation of semiconductors and semiconductor microstructures utilizing a new contactless technique

X. Yin, Xinxin Guo, Fred H. Pollak, G. D. Pettit, Jerry M. Woodall, Eun-He Cirlin

Proceedings Volume 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV; (1992) https://doi.org/10.1117/12.60452
Event: Semiconductors '92, 1992, Somerset, NJ, United States

Abstract

We present results of a new contactless mode of electroreflectance (ER) which utilizes a condenser-like system. One electrode consists of a transparent conductive coating on a transparent substrate which is separated from the sample surface by a thin layer of air. We have measured the contactless ER (CER) spectra from a number of materials including semi- insulating bulk GaAs; epitaxial In_0.15Ga_0.85As; bulk Hg_0.8Cd_0.2Te (80 K and 300 K), a GaAs structure with a large, uniform electric field; and a GaAs/Ga_1-xAl_xAs (x approximately equals 0.2) coupled double quantum well. Some measurements were performed up to 500 K. The phase of the CER signal yields information about the nature of the band bending at the surface of bulk or epitaxial material. The relative merits of CER and photoreflectance are discussed.

Citation Download Citation

X. Yin, Xinxin Guo, Fred H. Pollak, G. D. Pettit, Jerry M. Woodall, and Eun-He Cirlin "Electromodulation of semiconductors and semiconductor microstructures utilizing a new contactless technique", Proc. SPIE 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV, (1 July 1992); https://doi.org/10.1117/12.60452

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