Raman spectroscopy of delta-doped GaAs layers and wires (Invited Paper)

Joachim Wagner

doi:10.1117/12.60446

1 July 1992 Raman spectroscopy of δ-doped GaAs layers and wires (Invited Paper)

Joachim Wagner

Proceedings Volume 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV; (1992) https://doi.org/10.1117/12.60446
Event: Semiconductors '92, 1992, Somerset, NJ, United States

Abstract

Raman spectroscopy is used to study the incorporation of Si in (delta) -doped GaAs layers via light scattering by local vibrational modes. This includes the analysis of Si monolayers embedded in GaAs. Raman scattering by excitations of the two-dimensional electron gas in (delta) -doped GaAs gives information on the subbands formed by the space charge induced potential well. In addition, the effect of additional lateral confinement on these subbands can be studied.

Citation Download Citation

Joachim Wagner "Raman spectroscopy of δ-doped GaAs layers and wires (Invited Paper)", Proc. SPIE 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV, (1 July 1992); https://doi.org/10.1117/12.60446

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