Paper
18 August 1992 Multiple quantum wells for nonlinear optical applications in infrared
Arthur E. T. Chiou, Mohsen Khoshnevisan, Yia-Chung Chang
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Abstract
In this paper, we describe the development (which includes theoretical modeling, structure design, material growth, and sample characterizations) of SiGe superlattices (SL) for nonlinear optical applications in infrared. Our theoretical model predicts that the two-photon absorption coefficient in SiGe (110) SL structures can be on the order of 1 cm/KW, with very fast response (approximately 1 ps). In addition, we also show that quantum well materials with enhanced nonlinear refraction and moderate absorption offer potential advantages for applications in a lowest order Fabry-Perot etalon.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Arthur E. T. Chiou, Mohsen Khoshnevisan, and Yia-Chung Chang "Multiple quantum wells for nonlinear optical applications in infrared", Proc. SPIE 1692, Nonlinear and Electro-Optic Materials for Optical Switching, (18 August 1992); https://doi.org/10.1117/12.138063
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KEYWORDS
Absorption

Fabry–Perot interferometers

Stereolithography

Superlattices

Nonlinear optics

Silicon

Infrared radiation

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