Optical method for detection of microwave-field-caused breakdown in semiconductors

M. I. Akimov; A. V. Kozar

doi:10.1117/12.138386

2 December 1992 Optical method for detection of microwave-field-caused breakdown in semiconductors

M. I. Akimov, A. V. Kozar

Proceedings Volume 1703, Optical Technology for Microwave Applications VI and Optoelectronic Signal Processing for Phased-Array Antennas III; (1992) https://doi.org/10.1117/12.138386
Event: Aerospace Sensing, 1992, Orlando, FL, United States

Abstract

A method for investigation of breakdown in thin films and on surfaces of semiconductors under the influence of a strong electromagnetic field is suggested. The field causes drastic nonlinear chances in conductivity of a semiconductor leading to dielectric-metall transition on the surface of the sample. Simultaneously to an impulse of microwave radiation a beam of laser light is acting on the sample to detect changes in its electrophysical state. Since exciting (microwave) and analyzing (oPtics) channels are frequency separated the method is contact less, free from additional noises and stray coupling. Deendance of the critical value of the external field on semiconductor Parameters is being discussed

Citation Download Citation

M. I. Akimov and A. V. Kozar "Optical method for detection of microwave-field-caused breakdown in semiconductors", Proc. SPIE 1703, Optical Technology for Microwave Applications VI and Optoelectronic Signal Processing for Phased-Array Antennas III, (2 December 1992); https://doi.org/10.1117/12.138386

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