High-resolution spatial uniformity of surface reflectance and response of silicon photodiodes

Antoine Bittar; M. G. White

doi:10.1117/12.140163

9 February 1993 High-resolution spatial uniformity of surface reflectance and response of silicon photodiodes

Antoine Bittar, M. G. White

Proceedings Volume 1712, 14th Symposium on Photonic Measurement; (1993) https://doi.org/10.1117/12.140163
Event: 14th Symposium of the TC2 on Photonic Measurements, 1992, Sopron, Hungary

Abstract

The spatial variations of surface reflectance and response of a number of silicon photodiodes has been measured at wavelengths between 325 nm and 633 nm using a measurement spot size (1/e²) of approximately 50 micrometers . The surface reflectances have been modelled using ellipsometrically determined SiO₂ layer thicknesses and compared with spectrophotometric measurements. Also the reflectance variations across the diode surface have been correlated with the response variations to give a measured of the spatial internal quantum efficiency uniformity for each photodiode.

Citation Download Citation

Antoine Bittar and M. G. White "High-resolution spatial uniformity of surface reflectance and response of silicon photodiodes", Proc. SPIE 1712, 14th Symposium on Photonic Measurement, (9 February 1993); https://doi.org/10.1117/12.140163

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