Nonlinear behavior of photovoltage in Al/n-Si Schottky-barrier detector under IR laser radiation

Steponas P. Asmontas; Dalius Seliuta; Edmundas Sirmulis

doi:10.1117/12.138630

10 December 1992 Nonlinear behavior of photovoltage in Al/n-Si Schottky-barrier detector under IR laser radiation

Steponas P. Asmontas, Dalius Seliuta, Edmundas Sirmulis

Proceedings Volume 1735, Infrared Detectors: State of the Art; (1992) https://doi.org/10.1117/12.138630
Event: San Diego '92, 1992, San Diego, CA, United States

Abstract

The results of experimental investigations of the photovoltage generated in Schottky barrier under CO₂ laser radiation are presented. We demonstrate for the first time the nonlinear dependence of photovoltage on the incident power density. This dependence indicates the multi-photon light absorption in the semiconductor-metal interface.

Citation Download Citation

Steponas P. Asmontas, Dalius Seliuta, and Edmundas Sirmulis "Nonlinear behavior of photovoltage in Al/n-Si Schottky-barrier detector under IR laser radiation", Proc. SPIE 1735, Infrared Detectors: State of the Art, (10 December 1992); https://doi.org/10.1117/12.138630

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