RTP temperature control requirement for submicron device fabrication

Asit K. Ray

doi:10.1117/12.142078

16 March 1993 RTP temperature control requirement for submicron device fabrication

Asit K. Ray

Proceedings Volume 1804, Rapid Thermal and Laser Processing; (1993) https://doi.org/10.1117/12.142078
Event: Microelectronic Processing '92, 1992, San Jose, CA, United States

Abstract

For deep submicron device manufacturing, Rapid Thermal Processing (RTP) tools will play a major role. Current RTP tools have not been fully integrated into manufacturing. The most important problem is the product wafer temperature control. Data obtained on implant activation, titanium silicidation and oxidation processes will be reviewed to present the capability of current tools. Temperature control requirements for deep submicron device manufacturing will be discussed. Process performance of current RTP tools fall far short of the requirements.

Citation Download Citation

Asit K. Ray "RTP temperature control requirement for submicron device fabrication", Proc. SPIE 1804, Rapid Thermal and Laser Processing, (16 March 1993); https://doi.org/10.1117/12.142078

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