Characteristics of deep-red (770-nm) superlattice surface-emitting lasers

Yong-Hee Lee; Chang-Sup Shim; Jason J. Yoo

doi:10.1117/12.131242

23 October 1992 Characteristics of deep-red (770-nm) superlattice surface-emitting lasers

Yong-Hee Lee, Chang-Sup Shim, Jason J. Yoo

Proceedings Volume 1813, Optoelectronic Component Technologies; (1992) https://doi.org/10.1117/12.131242
Event: International Symposium on Optoelectronics in Computers, Communications, and Control, 1992, Hsinchu, Taiwan

Abstract

Thermal behavior of all-MBE surface-emitting lasers is studied for the temperature range of 80 - 310 K. Minimum threshold current observed around 200 K indicates a slight mismatch between gain maximum and Fabry-Perot resonance for the deep-red superlattice surface- emitting laser. The barrier heights for holes between hetero-interfaces of Al_0.3Ga_0.7As-Al_0.65Ga_0.35As and AlAs-Al_0.65Ga_0.35As are measured to be 77 meV for the deep-red surface-emitting laser.

Citation Download Citation

Yong-Hee Lee, Chang-Sup Shim, and Jason J. Yoo "Characteristics of deep-red (770-nm) superlattice surface-emitting lasers", Proc. SPIE 1813, Optoelectronic Component Technologies, (23 October 1992); https://doi.org/10.1117/12.131242

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