Interface properties of passivation layers on HgCdTe

Wen-Bin Tang; Tin-Fung Chang; Jia-Song Wu; Tien-Ming Chuang; Feng-Yuh Juang; Chung-Chi Chang; J. D. Cin; C. J. Hwang; Yan-Kuin Su

doi:10.1117/12.131290

26 October 1992 Interface properties of passivation layers on HgCdTe

Wen-Bin Tang, Tin-Fung Chang, Jia-Song Wu, Tien-Ming Chuang, Feng-Yuh Juang, Chung-Chi Chang, J. D. Cin, C. J. Hwang, Yan-Kuin Su

Author Affiliations +

Proceedings Volume 1814, Optical Sensors; (1992) https://doi.org/10.1117/12.131290
Event: International Symposium on Optoelectronics in Computers, Communications, and Control, 1992, Hsinchu, Taiwan

Abstract

The passivation of HgCdTe plays an important role in determining its device performance. Because of the extreme temperature sensitivity of the HgCdTe, we constrain deposition processes within 90 degree(s)C. Three different kinds of passivation layers (SiO₂, ZnS, native oxide/ZnS) have been studied and compared in this paper. The AES is used to evaluate the composition. The C-V curve of MIS capacitor and I-V curve of P-N junction diode are used to characterize the electrical properties of these passivation layers. We have successfully grown an excellent SiO₂ layer by the direct photo-CVD method at 70 degree(s)C, which makes the R_oA of HgCdTe photovoltaic diode to be as high as 5 X 10⁵ ohm- cm² at 77 degree(s)K.

Citation Download Citation

Wen-Bin Tang, Tin-Fung Chang, Jia-Song Wu, Tien-Ming Chuang, Feng-Yuh Juang, Chung-Chi Chang, J. D. Cin, C. J. Hwang, and Yan-Kuin Su "Interface properties of passivation layers on HgCdTe", Proc. SPIE 1814, Optical Sensors, (26 October 1992); https://doi.org/10.1117/12.131290

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