Two-poly 128x128-element area array with lateral antiblooming

William D. Washkurak; Savvas G. Chamberlain; James W. Roberts

doi:10.1117/12.148590

12 July 1993 Two-poly 128x128-element area array with lateral antiblooming

William D. Washkurak, Savvas G. Chamberlain, James W. Roberts

Proceedings Volume 1900, Charge-Coupled Devices and Solid State Optical Sensors III; (1993) https://doi.org/10.1117/12.148590
Event: IS&T/SPIE's Symposium on Electronic Imaging: Science and Technology, 1993, San Jose, CA, United States

Abstract

An image sensor with lateral antiblooming for overillumination protection is discussed. The device is implemented using a double poly, NMOS buried channel CCD process with a buried drain that runs adjacent to the channel stops. The antiblooming barrier is formed by a surface channel region adjacent to the buried data. Typically these devices are implemented using a three poly process but by eliminating the exposure control requirement, a two poly process technology can be used. The area array pixels are built using four phase CCD technology maximizing charge handling capacity. The surface channel antiblooming barrier confines the charge to buried channel operation.

Citation Download Citation

William D. Washkurak, Savvas G. Chamberlain, and James W. Roberts "Two-poly 128x128-element area array with lateral antiblooming", Proc. SPIE 1900, Charge-Coupled Devices and Solid State Optical Sensors III, (12 July 1993); https://doi.org/10.1117/12.148590

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