Post-annealing effect in HgCdTe photodiodes

Guo Min Yu

doi:10.1117/12.142011

1 April 1993 Post-annealing effect in HgCdTe photodiodes

Guo Min Yu

Proceedings Volume 1982, Photoelectronic Detection and Imaging: Technology and Applications '93; (1993) https://doi.org/10.1117/12.142011
Event: Photoelectronic Detection and Imaging: Technology and Applications '93, 1993, Beijing, China

Abstract

The post-annealing effect in HgCdTe photodiodes ((lambda) _c < 3 micrometers ) has been reported. After the post-annealing proceeding, the current responsibility of the photodiodes has no change. However, the noise current of the photodiodes has considerable changes. For the photodiodes with small noise current (i_n < 300 fA) before the post-annealing, the noise current increases after the post-annealing; for the photodiodes with big noise current (i_n > 300 fA) before the post-annealing, the noise current obviously reduces. The probable mechanism has been analyzed.

Citation Download Citation

Guo Min Yu "Post-annealing effect in HgCdTe photodiodes", Proc. SPIE 1982, Photoelectronic Detection and Imaging: Technology and Applications '93, (1 April 1993); https://doi.org/10.1117/12.142011

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