Paper
19 November 1993 Novel flat-panel display made of amorphous SiN:H/SiC:H thin-film LED
Wirote Boonkosum, Dusit Kruangam, Somsak Panyakeow
Author Affiliations +
Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162776
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy
Abstract
A novel flat-panel display made of hydrogenated amorphous silicon nitride and silicon carbide Thin Film LED (TFLED) has been developed. The a-SiN:H and a-SiC:H were prepared by a glow discharge plasma CVD technique. The emission colors can be obtained from red, yellow, green to white-blue. The amorphous TFLED can be fabricated as a large area on any foreign substrate. Any emission pattern can be obtained by designing the pattern of the internal thin film electrodes. A series of technical data on the preparation of the a-SiN:H/a-S:C:H TFLED is presented. Some new ideas of the utilizations of the developed TFLED in optoelectronic functional devices are presented and described.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wirote Boonkosum, Dusit Kruangam, and Somsak Panyakeow "Novel flat-panel display made of amorphous SiN:H/SiC:H thin-film LED", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); https://doi.org/10.1117/12.162776
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KEYWORDS
LED displays

Thin films

Light emitting diodes

Amorphous silicon

Chemical vapor deposition

Electrodes

Optoelectronic devices

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