Enhanced barrier height GaInAs MSM Schottky barrier photodiodes

S. V. Averin; A. Kohl; A. Mesquida Kusters; Klaus Heime

doi:10.1117/12.165991

21 January 1994 Enhanced barrier height GaInAs MSM Schottky barrier photodiodes

S. V. Averin, A. Kohl, A. Mesquida Kusters, Klaus Heime

Proceedings Volume 2051, International Conference on Optical Information Processing; (1994) https://doi.org/10.1117/12.165991
Event: Optical Information Processing: International Conference, 1993, St. Petersburg, Russian Federation

Abstract

The p⁺-cap layer of InP together with 80 nm of undoped (N_b equals 5 10¹⁴ cm^-3) assist layer of InP for the first time were used to increase the Schottky barrier height (up to 0.73 e.V.) on GaInAs and to create high speed MSM photodetectors on it. The average dark current density is 1.6 10^-4 A/cm² -- the lowest known value on the GaInAs semiconductor material. A rise time of 37 ps for the impulse response at (lambda) equals 1.3 micrometers was measured for a MSM diode with 2 micrometers fingers and 2 micrometers gaps and an active area of 30 X 30 micrometers ².

Citation Download Citation

S. V. Averin, A. Kohl, A. Mesquida Kusters, and Klaus Heime "Enhanced barrier height GaInAs MSM Schottky barrier photodiodes", Proc. SPIE 2051, International Conference on Optical Information Processing, (21 January 1994); https://doi.org/10.1117/12.165991

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available