Paper
15 February 1994 Printability of phase-shift defects using a perturbational model
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Abstract
A perturbational model which describes the printability of defects in phase-shift masks (PSM) as a function of focus position is presented and used along with the SPLAT to generate design data on tolerable defect size as a function of defect phase. Defects in a clear field mask with phases other than 180 degrees have the greatest tendency to print when out of focus. From a reformulation of the perturbational model, the tendency to print when out of focus can be explained by the combination of the phase contributed by defocus in the defect image with the phase of the light passing through the defect. To assess the printability of defects, the impact of defects near features in thin chrome attenuating PSM and embedded attenuating PSM were evaluated by calculating the image linewidth variation.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Robert John Socha and Andrew R. Neureuther "Printability of phase-shift defects using a perturbational model", Proc. SPIE 2087, 13th Annual BACUS Symposium on Photomask Technology and Management, (15 February 1994); https://doi.org/10.1117/12.167269
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Cited by 5 scholarly publications.
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KEYWORDS
Quartz

Phase shifts

Photomasks

Photomask technology

Diffraction

Semiconducting wafers

Data modeling

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