Evaluation of a charge injection device array

Zoran Ninkov; Chen Tang; Roger L. Easton Jr.

doi:10.1117/12.172761

1 May 1994 Evaluation of a charge injection device array

Zoran Ninkov, Chen Tang, Roger L. Easton Jr.

Proceedings Volume 2172, Charge-Coupled Devices and Solid State Optical Sensors IV; (1994) https://doi.org/10.1117/12.172761
Event: IS&T/SPIE 1994 International Symposium on Electronic Imaging: Science and Technology, 1994, San Jose, CA, United States

Abstract

A Charge Injection Device Technologies 512 X 512 CID array has been tested at liquid nitrogen temperature to assess its suitability for use in low light applications. The CID-38 chip used was installed in a SICam dewar/electronics from CIDTEC. For this particular system the noise floor was measured to be approximately equals 260 electrons rms for a single readout. Using the nondestructive readout option an approximately equals (root)N, where N is the number of readouts, improvement in this noise figure can be achieved. The average dark current at 77 degree(s)K was not measurable in a three-hour dark integration.

Citation Download Citation

Zoran Ninkov, Chen Tang, and Roger L. Easton Jr. "Evaluation of a charge injection device array", Proc. SPIE 2172, Charge-Coupled Devices and Solid State Optical Sensors IV, (1 May 1994); https://doi.org/10.1117/12.172761

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