Diffusion effects in chemically amplified deep-UV resists

Marco Antonio Zuniga; Eric Tomacruz; Andrew R. Neureuther

doi:10.1117/12.175349

16 May 1994 Diffusion effects in chemically amplified deep-UV resists

Marco Antonio Zuniga, Eric Tomacruz, Andrew R. Neureuther

Proceedings Volume 2195, Advances in Resist Technology and Processing XI; (1994) https://doi.org/10.1117/12.175349
Event: SPIE's 1994 Symposium on Microlithography, 1994, San Jose, CA, United States

Abstract

Evidence from simulation linewidth measurements is presented which suggests that a type II diffusion front is moving through positive tone t-BOC material during post exposure bake. A steady increase in linespace of 50 nm/min is observed in IBM APEX-E and even faster rates can be found in Apex-M. The converse is observed in negative resist systems, which evidence slower linewidth dependencies. The simultaneous reaction and 3D deprotection dependent diffusion simulation was carried out with a massively parallel approach. In addition, two-dimensional diffusion effects were studied with a test structure obtained with a super resolution phase shift mask.

Citation Download Citation

Marco Antonio Zuniga, Eric Tomacruz, and Andrew R. Neureuther "Diffusion effects in chemically amplified deep-UV resists", Proc. SPIE 2195, Advances in Resist Technology and Processing XI, (16 May 1994); https://doi.org/10.1117/12.175349

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