Paper
17 May 1994 Analyzing deep-UV lens aberrations using aerial image and latent image metrologies
Eric L. Raab, Christophe Pierrat, Charles H. Fields, Robert L. Kostelak, William G. Oldham, Sheila Vaidya
Author Affiliations +
Abstract
The technique of direct aerial image metrology (AIM) has been applied to characterize the performance of a microlithographic lens. AIM is potentially faster and more reproducible than measurements obtained by scanning electron microscopy. Direct measurement of the aerial image eliminates both the process variations associated with resist processing as well as the subjective nature of evaluating resist profiles. We have used AIM to evaluate some of the primary aberrations of a 248 nm stepper lens. We compare the results to those obtained with latent image scatterometry, a proven technique for measuring lens performance. We found that AIM, while providing qualitatively good results, contained some slight systematic errors that reduced the accuracy of the data. The sources of error and their remedies are discussed.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eric L. Raab, Christophe Pierrat, Charles H. Fields, Robert L. Kostelak, William G. Oldham, and Sheila Vaidya "Analyzing deep-UV lens aberrations using aerial image and latent image metrologies", Proc. SPIE 2197, Optical/Laser Microlithography VII, (17 May 1994); https://doi.org/10.1117/12.175450
Lens.org Logo
CITATIONS
Cited by 4 scholarly publications and 4 patents.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Semiconducting wafers

Monochromatic aberrations

Metrology

Deep ultraviolet

Reticles

Photoresist processing

Quartz

Back to Top