High-electron-mobility transistors (HEMTs) for millimeter wave applications

Jun-Ichiro Nikaido; Soshi Omura; Junji Saito

doi:10.1117/12.182990

19 August 1994 High-electron-mobility transistors (HEMTs) for millimeter wave applications

Jun-Ichiro Nikaido, Soshi Omura, Junji Saito

Proceedings Volume 2211, Millimeter and Submillimeter Waves; (1994) https://doi.org/10.1117/12.182990
Event: Millimeter and Submillimeter Waves and Applications: International Conference, 1994, San Diego, CA, United States

Abstract

Using advanced epitaxy and process technologies, we fabricated a planar-doped AlGaAs/GaAs HEMT with gates 0.1 micrometers long. At 12 GHz, the device had a noise figure (NF), including the package loss, of 0.50 dB with an associated gain (Gas) of 13.0 dB. This is, to our knowledge, the lowest NF at 12 GHz reported for AlGaAs/GaAs HEMTs. For GaAs-based InGaP/InGaAs HEMTs, we obtained a NF, including the package loss, of 0.41 dB at 12 GHz with a Gas of 13.0 dB, and a NF of 1.2 dB at 50 GHz with a Gas of 5.8 dB. These high-performance GaAs- based HEMTs are widely used at microwave frequencies. Millimeter wave applications also require low-cost high-performance HEMTs.

Citation Download Citation

Jun-Ichiro Nikaido, Soshi Omura, and Junji Saito "High-electron-mobility transistors (HEMTs) for millimeter wave applications", Proc. SPIE 2211, Millimeter and Submillimeter Waves, (19 August 1994); https://doi.org/10.1117/12.182990

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