Circuit design approaches for improved radiation hardness

William J. Mandl; Carl M. Rutschow

doi:10.1117/12.178477

23 June 1994 Circuit design approaches for improved radiation hardness

William J. Mandl, Carl M. Rutschow

Proceedings Volume 2226, Infrared Readout Electronics II; (1994) https://doi.org/10.1117/12.178477
Event: SPIE's International Symposium on Optical Engineering and Photonics in Aerospace Sensing, 1994, Orlando, FL, United States

Abstract

The use of a multiple dielectric gate insulator, and the addition of a gate insulator extension and guard-bars to the NMOS transistors, has resulted in a significant increase in total-dose ionizing radiation resistance for CMOS IR readout multiplexer circuits operating at cryogenic temperatures. This paper describes the implementation of these modifications, and also some observed anomalous transistor offset voltages that were apparently due to charges trapped in the multiple dielectric gate insulator during the circuit fabrication process.

Citation Download Citation

William J. Mandl and Carl M. Rutschow "Circuit design approaches for improved radiation hardness", Proc. SPIE 2226, Infrared Readout Electronics II, (23 June 1994); https://doi.org/10.1117/12.178477

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