Cryogenic GaAs JFETs

Thomas J. Cunningham; Eric R. Fossum

doi:10.1117/12.178479

23 June 1994 Cryogenic GaAs JFETs

Thomas J. Cunningham, Eric R. Fossum

Proceedings Volume 2226, Infrared Readout Electronics II; (1994) https://doi.org/10.1117/12.178479
Event: SPIE's International Symposium on Optical Engineering and Photonics in Aerospace Sensing, 1994, Orlando, FL, United States

Abstract

Gallium arsenide junction field-effect transistors (GaAs JFETs) are promising for deep cryogenic (< 10 K) readout electronics applications. This paper presents the structure and fabrication of GaAs (JFETs) and their performance at 4 K. It is shown that these JFETs operate normally at 4 K, with no anomalous behavior such as kinks or hysteresis. The noise voltage follows a 1/(root)f dependence and is approximately 1 (mu) v/(root)Hz at 1 Hz for a ring JFET that is 1250 micrometers in circumference and 20 micrometers long. The gate leakage current reaches 1 pA at a gate voltage of -6 V, and increases exponentially at approximately 1 decade per volt. The noise is within the limits of the requirements for typical VLWIR readout applications; the extrapolated gate leakage current at typical operating biases is higher than the required limit by two orders of magnitude. Planned improvements to reduce the leakage current are discussed.

Citation Download Citation

Thomas J. Cunningham and Eric R. Fossum "Cryogenic GaAs JFETs", Proc. SPIE 2226, Infrared Readout Electronics II, (23 June 1994); https://doi.org/10.1117/12.178479

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