Low compensation impurity band photoconductors

S. Pasquier

doi:10.1117/12.2303269

1 January 1994 Low compensation impurity band photoconductors

S. Pasquier

Proceedings Volume 2250, International Conference on Millimeter and Submillimeter Waves and Applications 1994; 225070 (1994) https://doi.org/10.1117/12.2303269
Event: Millimeter and Submillimeter Waves and Applications: International Conference, 1994, San Diego, CA, United States

Abstract

The present study of silicon based impurity band photoconductors evolves from the development of a space borne instrument for spectroscopy of the atmosphere using far infrared thermal emission of relevant molecular species1 in the spectral range 80 to 400 cm-1. Actually, the spectral range from 200 to 400 cm-1 in which, for example, the key N205 molecule has a strong signature, is not well covered by the standard available Beryllium doped Germanium (Ge:Be) photoconductors which suffer from poor quantum efficiency in this region.. They are also quite sensitive to cosmic ray particles due to their large volume. In addition, only a few different materials are available because of the difficult crystal growth process.

Citation Download Citation

S. Pasquier "Low compensation impurity band photoconductors", Proc. SPIE 2250, International Conference on Millimeter and Submillimeter Waves and Applications 1994, 225070 (1 January 1994); https://doi.org/10.1117/12.2303269

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