Evaporated SnS semiconducting thin films

K. Deraman; S. B. Sakrani; Mostafa S. Ismail

doi:10.1117/12.190780

26 October 1994 Evaporated SnS semiconducting thin films

K. Deraman, S. B. Sakrani, Mostafa S. Ismail

Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190780
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China

Abstract

Evaporated tin sulphide thin films (SnS) have been prepared onto glass substrates maintained at fixed temperatures in the range 50-300 degree(s)C and controlled film thicknesses. The films are nonstoichiometric, containing both SnS and its higher derivative compounds with different compositions. X-ray results showed that SnS was initially formed at 100 degree(s)C, accumulating and eventually became a stable compound at a substrate temperature, T_s of 300 degree(s)C. Observation on SEM micrographs revealed the existence of nonoriented film structures at low T_s and compacted crystalline structures at T_s equals 300 degree(s)C with the associated change in grain sizes from 0.1 to 1.2 micrometers . Film conductivity increased from 0.62 to 2.54 Sm^-1 with increasing substrate temperature. The low temperature measurements showed that the films underwent hopping and free band conduction at temperatures lower and higher than 220 K, respectively. A further investigation on the film's transmittance spectrum shows the dependent of optical bandgaps (1.26-1.07 eV) with substrate temperatures; these were attributed to the changes in the film's compositions.

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K. Deraman, S. B. Sakrani, and Mostafa S. Ismail "Evaporated SnS semiconducting thin films", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); https://doi.org/10.1117/12.190780

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