Temperature-dependent behavior of 980-nm strained quantum well lasers

Rashit F. Nabiev; Edward C. Vail; Constance J. Chang-Hasnain

doi:10.1117/12.208443

28 April 1995 Temperature-dependent behavior of 980-nm strained quantum well lasers

Rashit F. Nabiev, Edward C. Vail, Constance J. Chang-Hasnain

Proceedings Volume 2382, Laser Diodes and Applications; (1995) https://doi.org/10.1117/12.208443
Event: Photonics West '95, 1995, San Jose, CA, United States

Abstract

Temperature dependent efficiency and modulation characteristics of strained quantum well (QW) InGaAs/InGaAsP/InGaP 980 nm laser diodes of various designs are analyzed using self consistent carrier transport analysis including stimulated emission. The decrease of the differential efficiency of 980 nm laser diodes with temperature is found to be caused by an increased modal loss attributed to the free carrier (electron and hole) absorption. The obtained results agree well with experimentally observed increase of internal loss at higher temperatures. Modulation characteristics are determined mainly by drift-diffusion in separate confinement region along with processes of carrier capture and escape in QWs. At high temperatures modulation bandwidth is reduced because of the decrease in differential gain. Graded index separate confinement heterostructure and multi-QW lasers show superior efficiency and modulation behavior at high temperatures.

Citation Download Citation

Rashit F. Nabiev, Edward C. Vail, and Constance J. Chang-Hasnain "Temperature-dependent behavior of 980-nm strained quantum well lasers", Proc. SPIE 2382, Laser Diodes and Applications, (28 April 1995); https://doi.org/10.1117/12.208443

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