Paper
26 May 1995 Latent image metrology for production wafer steppers
Author Affiliations +
Abstract
A new latent image metrology technique is discussed that determines best focus with a precision of (sigma) equals 20 nm. This technique uses the existing alignment system of an ASM-L wafer stepper and requires no hardware or software modifications. The user just needs a standard chrome reticle. It can operate for machine setup at the factory, but also in-process for fully automatic self calibration of focus and tilt. A typical measurement takes a few minutes.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peter Dirksen, Walter de Laat, and Henry J. L. Megens "Latent image metrology for production wafer steppers", Proc. SPIE 2440, Optical/Laser Microlithography VIII, (26 May 1995); https://doi.org/10.1117/12.209297
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CITATIONS
Cited by 12 scholarly publications.
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KEYWORDS
Semiconducting wafers

Optical alignment

Monochromatic aberrations

Scanning electron microscopy

Deep ultraviolet

Metrology

Silicon

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