Light-controlled switching in p+nSi-ITO structures

Ludmila S. Gagara; Elena A. Negru; Valentin Pleshka; Dormidont Sherban; Alexei V. Simaschevici

doi:10.1117/12.203595

8 March 1995 Light-controlled switching in p⁺nSi-ITO structures

Ludmila S. Gagara, Elena A. Negru, Valentin Pleshka, Dormidont Sherban, Alexei V. Simaschevici

Proceedings Volume 2461, ROMOPTO '94: Fourth Conference in Optics; (1995) https://doi.org/10.1117/12.203595
Event: ROMOPTO '94: 4th Conference on Optics, 1994, Bucharest, Romania

Abstract

I-V characteristics for a structure consisting of a silicon p⁺-n junction and a semiconductor-insulator-semiconductor structure obtained by spray deposition of In₂O₃:SnO₂ (ITO) thin layer of on the surface of nSi have been obtained and investigated. In the case of direct biased p⁺nSi junction and reverse biased nSi-ITO structure a switching from high-resistance into low-resistance state occurs. The switching may be removed by voltage decreasing or illumination with white light. I-V characteristics for each junction have been investigated and a band diagram for the p⁺-nSi-ITO structure have been proposed. This diagram allows to explain the observed current switching as a result of the double injection in nSi region. These results show that the p⁺nSi-ITO structure possesses an S-type I-V characteristic, which may be controlled by voltage and by light. Unlike others S-type diodes in this case the illumination switches the structure from high-resistance into low-resistance state.

Citation Download Citation

Ludmila S. Gagara, Elena A. Negru, Valentin Pleshka, Dormidont Sherban, and Alexei V. Simaschevici "Light-controlled switching in p⁺nSi-ITO structures", Proc. SPIE 2461, ROMOPTO '94: Fourth Conference in Optics, (8 March 1995); https://doi.org/10.1117/12.203595

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