Paper
8 December 1995 X-ray mask fabrication techniques for micromachining
Yuli Vladimirsky, Olga Vladimirsky, Volker Saile, Kevin J. Morris, J. Michael Klopf
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Abstract
In this paper we present specifics of x-ray mask fabrication suitable for high-aspect ratio microlithography in micromachining. Results of fabrication and exposures using x-ray masks with approximately 4 micrometer thick gold absorber (one level resist) are illustrated. For conventional x-ray masks commercially available substrates were used: B-doped Si membrane (2-3 micrometers thick) on a 4' Si wafer bonded to a Pyrex glass ring. A new approach -- the transfer mask technique -- is demonstrated. This technique is based on forming an absorber pattern directly onto the resist surface of the sample. The transfer mask method is suitable for any radiation (visible, UV, and x-rays) and is based on the use of a master mask (optical or x- ray) to achieve patterns with desired aspect ratio. When used in conjunction with multiple x- ray exposures and sequential developments the transfer mask method produces patterns with extremely high aspect ratio.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuli Vladimirsky, Olga Vladimirsky, Volker Saile, Kevin J. Morris, and J. Michael Klopf "X-ray mask fabrication techniques for micromachining", Proc. SPIE 2621, 15th Annual BACUS Symposium on Photomask Technology and Management, (8 December 1995); https://doi.org/10.1117/12.228193
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CITATIONS
Cited by 5 scholarly publications.
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KEYWORDS
Photomasks

X-rays

Micromachining

Polymethylmethacrylate

Gold

Silicon

X-ray lithography

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