Control of CVD precursor purity for integrated circuit manufacture

David A. Roberts; Hans J. Graf; Michael J. Halberstadt

doi:10.1117/12.221307

19 September 1995 Control of CVD precursor purity for integrated circuit manufacture

David A. Roberts, Hans J. Graf, Michael J. Halberstadt

Proceedings Volume 2637, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing; (1995) https://doi.org/10.1117/12.221307
Event: Microelectronic Manufacturing '95, 1995, Austin, TX, United States

Abstract

Chemical vapor deposition, CVD, has assumed an increasing share of the processes utilized in the manufacture of submicron integrated circuits. In addition to the conventional CVD materials such as silicon oxide, nitride and polysilicon, an array of new materials for both dielectric and conductive material applications are in development. For films like BPSG or tungsten, convenient volatile precursor sources exist, however, in other cases temperature sensitive, lower volatility liquids and solids are utilized. The quality and consistency of these molecular precursors can have a marked impact on the film forming process. The application of SPC methodology to precursor manufacture provides an effective metric for controlling both the quality and the consistency of the precursors.

Citation Download Citation

David A. Roberts, Hans J. Graf, and Michael J. Halberstadt "Control of CVD precursor purity for integrated circuit manufacture", Proc. SPIE 2637, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing, (19 September 1995); https://doi.org/10.1117/12.221307

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