Ion-beam-induced amorphization and recrystallization processes in SiC: Raman-scattering analysis

Alejandro Perez-Rodriguez; Christoph Serre; L. Calvo-Barrio; A. Romano-Rodriguez; Juan Ramon Morante; Y. Pacaud; R. Koegler; Wolfgang Skorupa

doi:10.1117/12.226213

3 November 1995 Ion-beam-induced amorphization and recrystallization processes in SiC: Raman-scattering analysis

Alejandro Perez-Rodriguez, Christoph Serre, L. Calvo-Barrio, A. Romano-Rodriguez, Juan Ramon Morante, Y. Pacaud, R. Koegler, Wolfgang Skorupa

Author Affiliations +

Proceedings Volume 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1995) https://doi.org/10.1117/12.226213
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1995, Kiev, Ukraine

Abstract

The Raman scattering analysis of damaged and amorphous SiC layers obtained by ion beam processing has been performed as a function of the processing parameters. Two different sets of samples are investigated: (a) 6H-SiC samples implanted with Ge⁺ ions at different doses, and (b) SiC layers obtained by C⁺ ion implantation into amorphous Si. In the first case, damage accumulation and amorphization are analyzed as a function of the implanted dose. In the second case, deep in the analysis of the dependence of recrystallization processes on the amorphous structure, the ion beam induced epitaxial crystallization (IBIEC) of amorphous layers obtained by carbon implantation is also studied. The results show the strong ability of Raman scattering for the identification of amorphous phases in the layers, as well as for the evaluation of residual damage after thermal or IBIEC processes. Correlation of these data with IR, RBS and TEM allows us to determine the structural evolution of the samples under thermal or irradiation processes.

Citation Download Citation

Alejandro Perez-Rodriguez, Christoph Serre, L. Calvo-Barrio, A. Romano-Rodriguez, Juan Ramon Morante, Y. Pacaud, R. Koegler, and Wolfgang Skorupa "Ion-beam-induced amorphization and recrystallization processes in SiC: Raman-scattering analysis", Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); https://doi.org/10.1117/12.226213

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