Advanced epitaxial growth and device processing techniques for ultrahigh-speed (>40 GHz) directly modulated semiconductor lasers

John D. Ralston; Eric C. Larkins; K. Eisele; S. Weisser; Susann Buerkner; A. Schoenfelder; Juergen Daleiden; Konrad Czotscher; Ignacio Esquivias; Joachim Fleissner; R. E. Sah; Martin Maier; Willy Benz; Josef Rosenzweig

doi:10.1117/12.237689

10 April 1996 Advanced epitaxial growth and device processing techniques for ultrahigh-speed (>40 GHz) directly modulated semiconductor lasers

John D. Ralston, Eric C. Larkins, K. Eisele, S. Weisser, Susann Buerkner, A. Schoenfelder, Juergen Daleiden, Konrad Czotscher, Ignacio Esquivias, Joachim Fleissner, R. E. Sah, Martin Maier, Willy Benz, Josef Rosenzweig

Author Affiliations +

Proceedings Volume 2683, Fabrication, Testing, and Reliability of Semiconductor Lasers; (1996) https://doi.org/10.1117/12.237689
Event: Photonics West '96, 1996, San Jose, CA, United States

Abstract

Optimized molecular-beam epitaxial growth of pseudomorphic MQWs, the application of abrupt and spatially-localized carbon doping, and the development of short-cavity coplanar ridge-waveguide structures with high-quality chemically-assisted ion-beam etched facets have been combined to fabricate GaAs-based MQW lasers which have achieved damping-limited direct modulation bandwidths exceeding 40 GHz. More detailed measurements indicate intrinsic modulation bandwidths exceeding 60 GHz for devices with p-doped active regions. The reduced linewidth enhancement factor, (alpha) , observed in these lasers also indicates their suitability for low-chirp high-speed direct modulation. The laser design has been further incorporated into a complete technological process for the monolithic integration of GaAs MQW lasers and HEMT-based laser-driver circuits capable of operation in data rates up to 20 Gb/s. Using the impurity-free interdiffusion process, large shifts in the lasing wavelength have been achieved with no strain relaxation and while maintaining the high-speed modulation properties of the pseudo-morphic InGaAs/GaAs MQW lasers, demonstrating the feasibility of fabricating high-speed multi-wavelength laser arrays.

Citation Download Citation

John D. Ralston, Eric C. Larkins, K. Eisele, S. Weisser, Susann Buerkner, A. Schoenfelder, Juergen Daleiden, Konrad Czotscher, Ignacio Esquivias, Joachim Fleissner, R. E. Sah, Martin Maier, Willy Benz, and Josef Rosenzweig "Advanced epitaxial growth and device processing techniques for ultrahigh-speed (>40 GHz) directly modulated semiconductor lasers", Proc. SPIE 2683, Fabrication, Testing, and Reliability of Semiconductor Lasers, (10 April 1996); https://doi.org/10.1117/12.237689

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available