Paper
10 April 1996 InGaAs/Ga(Al)As and Al-free 980-nm pump laser diodes: electro-optical properties and reliability issues
Jacques Wallon, S. Bianic, B. Bauduin, Pascal Y. Devoldere
Author Affiliations +
Abstract
Different 980 nm ridge waveguide pump laser diodes fabricated either from the InGaAs/Ga(Al)As system or from the InGaAs/Ga(In)As(P)/GaInP (Al-free) one, and purchased from different manufacturers, have been submitted to an accurate electro-optical characterization and lifetest for a comparative study. Measurements show that the electro- optical behavior, especially the kink power level and the optical spectrum, is strongly correlated with the stripe design. These different behaviors strongly impact the short term stability of both output power and wavelength of related 980 nm pump laser modules. Lifetests and failure analysis have been performed and demonstrate the vulnerability of the front facet.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jacques Wallon, S. Bianic, B. Bauduin, and Pascal Y. Devoldere "InGaAs/Ga(Al)As and Al-free 980-nm pump laser diodes: electro-optical properties and reliability issues", Proc. SPIE 2683, Fabrication, Testing, and Reliability of Semiconductor Lasers, (10 April 1996); https://doi.org/10.1117/12.237676
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KEYWORDS
Manufacturing

Optics manufacturing

Electro optics

Aluminum

Semiconductor lasers

Failure analysis

Gallium arsenide

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