Latitude of the BAR process compared to the monolayer and TAR processes for 0.35-um design rules at gate level

Sandrine Andre; Andre P. Weill

doi:10.1117/12.241868

14 June 1996 Latitude of the BAR process compared to the monolayer and TAR processes for 0.35-μm design rules at gate level

Sandrine Andre, Andre P. Weill

Author Affiliations +

Proceedings Volume 2724, Advances in Resist Technology and Processing XIII; (1996) https://doi.org/10.1117/12.241868
Event: SPIE's 1996 International Symposium on Microlithography, 1996, Santa Clara, CA, United States

Abstract

The aim of this paper is to investigate experimentally the performances of three photolithographic processes, the monolayer, AQUATAR^R and BARLi^R processes, for 0.35 micrometer patterning using the exposure-defocus (E-D) tree technique. Parameters of practical importance are considered such as exposure latitude and depth of focus for dense and isolated features, and their overlapping latitudes, i.e. the proximity effect. The influence of the resist thickness (minimum and maximum incoupling thicknesses) and the impact of a 50 nm sizing of the mask have also been evaluated. Using the BARLi^R process, significant improvements have been demonstrated for proximity and CD swing effects. The results highlight the problems of pushing i-line lithography to the 0.35 micrometer regime and demonstrate that, to achieve acceptable CD control, a BAR process must be used.

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Sandrine Andre and Andre P. Weill "Latitude of the BAR process compared to the monolayer and TAR processes for 0.35-μm design rules at gate level", Proc. SPIE 2724, Advances in Resist Technology and Processing XIII, (14 June 1996); https://doi.org/10.1117/12.241868

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