Wafer and chip deformation caused by pattern transfer

Akira Imai; Norio Hasegawa; Shinji Okazaki; Kouichi Sakaguchi

doi:10.1117/12.240975

7 June 1996 Wafer and chip deformation caused by pattern transfer

Akira Imai, Norio Hasegawa, Shinji Okazaki, Kouichi Sakaguchi

Proceedings Volume 2726, Optical Microlithography IX; (1996) https://doi.org/10.1117/12.240975
Event: SPIE's 1996 International Symposium on Microlithography, 1996, Santa Clara, CA, United States

Abstract

In this paper, we have investigated the deformation of wafers and chips caused by Si₃N₄ film deposition and pattern transfer on Si wafer substrates using experiments and finite element analysis simulations. From the experimental results, the wafer deformation is non- linearly dependent on transferred patterns, and the difference between the chip deformation of the x-axis component and that of the y-axis component when L/S patterns are transferred is as much as 10-nm under the experimental conditions. The simulated results also show that pattern displacement depends on the total film area ratio in a chip, the size of the transferred pattern area and its position. In order to suppress wafer deformation when using a 300-mm- (phi) wafer smaller than that of 200-mm-(phi) wafer, it was found that the wafer thickness should be 1.5 times thicker than 200-mm-(phi) wafer.

Citation Download Citation

Akira Imai, Norio Hasegawa, Shinji Okazaki, and Kouichi Sakaguchi "Wafer and chip deformation caused by pattern transfer", Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); https://doi.org/10.1117/12.240975

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