Plasma ion assisted deposition: a novel technique for the production of optical coatings

K. Matl

doi:10.1117/12.2298962

1 September 1996 Plasma ion assisted deposition: a novel technique for the production of optical coatings

K. Matl

Proceedings Volume 2778, 17th Congress of the International Commission for Optics: Optics for Science and New Technology; 277828 (1996) https://doi.org/10.1117/12.2298962
Event: 17th Congress of the International Commission for Optics: Optics for Science and New Technology, 1996, Taejon, Korea, Republic of

Abstract

Ion assisted deposition (IAD) is a well known technique to improve the properties of thermally evaporated thin films. A wide range of materials and completed layer systems have already been investigated. Because of the low total ion current and the small beam size of the commercial available ion sources, the useful substrate area is strongly limited. With a newly developed advanced plasma source (APS) we have overcome these problems. A total ion current of up to 5 A with excellent uniformity over a large area substrate holder (Ã¢â‚¬â€ 1 m2) has been achieved. The plasma source is installed in conventional box coating systems. Besides plasma-IAD the APS is also useful for plasma- CVD processes like plasma polymerization. The principle of operation of the plasma assisted processes with the APS is described. Results of dielectric materials and completed layer systems like shift free line filters, ITO-coatings and AR-coatings are presented. In particular, in case of organic substrate materials, the advantages of the APS are outstanding. Scratch resistant layers in combination with AR-coatings and hydrophobic surface layers onto organic substrates are successfully introduced in production.

Citation Download Citation

K. Matl "Plasma ion assisted deposition: a novel technique for the production of optical coatings", Proc. SPIE 2778, 17th Congress of the International Commission for Optics: Optics for Science and New Technology, 277828 (1 September 1996); https://doi.org/10.1117/12.2298962

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