Method for defect selection in grinding sapphire wafers

O. V. Astafiev

doi:10.1117/12.2298976

1 September 1996 Method for defect selection in grinding sapphire wafers

O. V. Astafiev

Proceedings Volume 2778, 17th Congress of the International Commission for Optics: Optics for Science and New Technology; 27782M (1996) https://doi.org/10.1117/12.2298976
Event: 17th Congress of the International Commission for Optics: Optics for Science and New Technology, 1996, Taejon, Korea, Republic of

Abstract

It is known that inexpensive sapphire produced by means of Verneuil growth method contains special type of defects. The defects are accumulations of micron scale bubbles that occur due to growth process. General consumer of the sapphire is watch industry, which demand for the material is quickly increased for last time. It's very important to select the defects before stage of fine polishing. We represent a new technique for selection defective sapphire wafers with grinding surfaces. The technique is non-destructive, contactless and expressive tool for technological inspection.

Citation Download Citation

O. V. Astafiev "Method for defect selection in grinding sapphire wafers", Proc. SPIE 2778, 17th Congress of the International Commission for Optics: Optics for Science and New Technology, 27782M (1 September 1996); https://doi.org/10.1117/12.2298976

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