Optical properties of SiOxNy thin films prepared by ion beam assisted deposition

Hyun Ju Cho

doi:10.1117/12.2298985

1 September 1996 Optical properties of SiO_xN_y thin films prepared by ion beam assisted deposition

Hyun Ju Cho

Proceedings Volume 2778, 17th Congress of the International Commission for Optics: Optics for Science and New Technology; 27782V (1996) https://doi.org/10.1117/12.2298985
Event: 17th Congress of the International Commission for Optics: Optics for Science and New Technology, 1996, Taejon, Korea, Republic of

Abstract

Silicon oxynitride thin films were made by reactive ion beam assisted deposition. The refractive index of deposited films, determined by both envelope method and prism coupling method, was able to be varied from 1.46 of SiO₂ to 1.97 of Si₃N₄ by controlling the stoichimetry. The packing density of silicon oxyniteride films was measured by the vacuum-to-air spectral shift and water absorption band.

Citation Download Citation

Hyun Ju Cho "Optical properties of SiO_xN_y thin films prepared by ion beam assisted deposition", Proc. SPIE 2778, 17th Congress of the International Commission for Optics: Optics for Science and New Technology, 27782V (1 September 1996); https://doi.org/10.1117/12.2298985

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