Mixing in group-V sublattice of GaAs-related crystals

Ewa Beata Radojewska; Ewa Placzek-Popko

doi:10.1117/12.238146

8 April 1996 Mixing in group-V sublattice of GaAs-related crystals

Ewa Beata Radojewska, Ewa Placzek-Popko

Proceedings Volume 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications; (1996) https://doi.org/10.1117/12.238146
Event: Metal/Nonmetal Microsystems: Physics, Technology, and Applications, 1995, Polanica Zdroj, Poland

Abstract

III-V mixed crystals are interesting for their application in modern optoelectronics and microwave electronics. Two mixed systems, namely GaAs_1-xSb_x and GaAs_{1-x- y}Sb_xP_y, were chosen to investigate an influence of gallium phosphite and gallium antimonide added to gallium arsenide on band structure properties and crystal lattice structure.

Citation Download Citation

Ewa Beata Radojewska and Ewa Placzek-Popko "Mixing in group-V sublattice of GaAs-related crystals", Proc. SPIE 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications, (8 April 1996); https://doi.org/10.1117/12.238146

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