Novel CCD structures of high sensitivity

Evgeni V. Kostyukov; Andre A. Pugachev; Victor A. Shilin; Alexander V. Veto

doi:10.1117/12.238217

8 April 1996 Novel CCD structures of high sensitivity

Evgeni V. Kostyukov, Andre A. Pugachev, Victor A. Shilin, Alexander V. Veto

Proceedings Volume 2790, Fifth Conference on Charge-Coupled Devices and CCD Systems; (1996) https://doi.org/10.1117/12.238217
Event: Fifth Conference on Charge-Coupled Devices and CCD Systems, 1995, Krym, Russian Federation

Abstract

A new class of charge-coupled devices called junction virtual phase (JVP) CCD's is described. JVP CCDs have very high photosensitivity because their pixels are designed without any metal or polysilicon gates. A new principle of buried channel modulation through a narrow depleted layer is used. This principle is realized in a few JVP structures. Two dimensional simulation of these structures are presented.

Citation Download Citation

Evgeni V. Kostyukov, Andre A. Pugachev, Victor A. Shilin, and Alexander V. Veto "Novel CCD structures of high sensitivity", Proc. SPIE 2790, Fifth Conference on Charge-Coupled Devices and CCD Systems, (8 April 1996); https://doi.org/10.1117/12.238217

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